Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Yong Chan | - |
dc.contributor.author | Hwang, Su Min | - |
dc.contributor.author | Le, Dan N. | - |
dc.contributor.author | Kondusamy, Aswin L. N. | - |
dc.contributor.author | Mohan, Jaidah | - |
dc.contributor.author | Kim, Sang Woo | - |
dc.contributor.author | Kim, Jin Hyun | - |
dc.contributor.author | Lucero, Antonio T. | - |
dc.contributor.author | Ravichandran, Arul | - |
dc.contributor.author | Kim, Harrison Sejoon | - |
dc.contributor.author | Kim, Si Joon | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Alvarez, Daniel | - |
dc.contributor.author | Spiegelman, Jeff | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.date.accessioned | 2021-07-30T04:52:47Z | - |
dc.date.available | 2021-07-30T04:52:47Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1821 | - |
dc.description.abstract | Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 degrees C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 degrees C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 degrees C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N(2)H(4)as a replacement for NH(3)is a good alternative due to its stringent thermal budget. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.3390/ma13153387 | - |
dc.identifier.scopusid | 2-s2.0-85089749556 | - |
dc.identifier.wosid | 000567069400001 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.13, no.15, pp.1 - 10 | - |
dc.relation.isPartOf | MATERIALS | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ALN THIN-FILMS | - |
dc.subject.keywordPlus | XPS ANALYSIS | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | TRIMETHYLALUMINUM | - |
dc.subject.keywordPlus | AMMONIA | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | aluminum nitride | - |
dc.subject.keywordAuthor | hydrazine | - |
dc.subject.keywordAuthor | trimethyl aluminum (TMA) | - |
dc.identifier.url | https://www.mdpi.com/1996-1944/13/15/3387 | - |
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