Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Sourceopen access
- Authors
- Jung, Yong Chan; Hwang, Su Min; Le, Dan N.; Kondusamy, Aswin L. N.; Mohan, Jaidah; Kim, Sang Woo; Kim, Jin Hyun; Lucero, Antonio T.; Ravichandran, Arul; Kim, Harrison Sejoon; Kim, Si Joon; Choi, Rino; Ahn, Jinho; Alvarez, Daniel; Spiegelman, Jeff; Kim, Jiyoung
- Issue Date
- Aug-2020
- Publisher
- MDPI
- Keywords
- atomic layer deposition (ALD); aluminum nitride; hydrazine; trimethyl aluminum (TMA)
- Citation
- MATERIALS, v.13, no.15, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS
- Volume
- 13
- Number
- 15
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1821
- DOI
- 10.3390/ma13153387
- Abstract
- Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 degrees C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 degrees C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 degrees C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N(2)H(4)as a replacement for NH(3)is a good alternative due to its stringent thermal budget.
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