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High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition

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dc.contributor.author박진성-
dc.date.accessioned2023-04-03T16:33:22Z-
dc.date.available2023-04-03T16:33:22Z-
dc.date.created2023-02-11-
dc.date.issued2022-05-09-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/183474-
dc.publisherSociety of Information Display-
dc.titleHigh Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition-
dc.typeConference-
dc.contributor.affiliatedAuthor박진성-
dc.identifier.bibliographicCitationSID Display Week 2022-
dc.relation.isPartOfSID Display Week 2022-
dc.citation.titleSID Display Week 2022-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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