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Dual-gated flash memory device characteristics with ferroelectric Zr-doped HfO2 thin film and IGZO oxide semiconductor
- Authors
- 최창환
- Issue Date
- 9-Nov-2022
- Publisher
- 대한금속재료학회
- Citation
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)
- Conference Name
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)
- Place
- 제주 라마다호텔
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)