Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages
- Authors
- Lee, Tae-Young; Kang, Min-Su; Yoo, Sehoon; Kim, Young-Ho; Kim, Min-Su
- Issue Date
- Jul-2020
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.59, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 59
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1860
- DOI
- 10.35848/1347-4065/ab922e
- ISSN
- 0021-4922
- Abstract
- In this study, the effect of growth of intermetallic compound (IMC) layer between Au-20 wt% Sn solder and electroless Ni/immersion Au (ENIG) on the thermal resistance of a flip-chip (FC) light emitting diode (LED) package was investigated. Two IMC layers were formed at the interface of FC LED package, including Au5Sn and (Ni, Au)(3)Sn-4 that were identified using a transmission electron microscopy. A thermal aging test was carried out at 200 degrees C for 1000 h to observe IMCs growth. After 1000 h, the (Ni, Au)(3)Sn-4 thickness increased to about 1.5 mu m and the thermal resistance of the FC LED package increased by 3.5 times compared to the initial thermal resistance of 2 K W-1. As the (Ni, Au)(3)Sn-4 grew, a calculation of thermal resistance also increased comparing to the initial aging test, thus, the growth of (Ni, Au)(3)Sn-4 layer can be effective factor on the increase of thermal resistances of FC LED package.
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