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Soluble-processed aluminum doped yttrium oxide gate insulator for high performance amorphous oxide transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jiwon | - |
| dc.contributor.author | Shin, Yeonwoo | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2021-08-02T14:27:34Z | - |
| dc.date.available | 2021-08-02T14:27:34Z | - |
| dc.date.issued | 2017-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18610 | - |
| dc.description.abstract | The low-cost spin-cast AI0.4Y1.6O3 films were prepared as the gate insulator for the IZO transistors. The ternary AI0.4Y1.6O3 films provide a smooth, high permittivity with excellent insulating properties compared to binary AI2O3 or Y2O3 films. This behavior can be attributed to the structure stabilization resulting from the cation alloying-mixing effect. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Soluble-processed aluminum doped yttrium oxide gate insulator for high performance amorphous oxide transistors | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85056278260 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.1, pp 410 - 412 | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 1 | - |
| dc.citation.startPage | 410 | - |
| dc.citation.endPage | 412 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | II-VI semiconductors | - |
| dc.subject.keywordPlus | Indium compounds | - |
| dc.subject.keywordPlus | Ternary alloys | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Yttrium oxide | - |
| dc.subject.keywordPlus | Zinc oxide | - |
| dc.subject.keywordPlus | Amorphous oxides | - |
| dc.subject.keywordPlus | Gate insulator | - |
| dc.subject.keywordPlus | High permittivity | - |
| dc.subject.keywordPlus | Indium zinc oxides | - |
| dc.subject.keywordPlus | Insulating properties | - |
| dc.subject.keywordPlus | Mixing effects | - |
| dc.subject.keywordPlus | Solution process | - |
| dc.subject.keywordPlus | Structure stabilization | - |
| dc.subject.keywordPlus | Aluminum oxide | - |
| dc.subject.keywordAuthor | Aluminum yttrium oxide | - |
| dc.subject.keywordAuthor | Indium zinc oxide | - |
| dc.subject.keywordAuthor | Solution process | - |
| dc.subject.keywordAuthor | Ternary alloy | - |
| dc.subject.keywordAuthor | Thin-film transistor | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)