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Soluble-processed aluminum doped yttrium oxide gate insulator for high performance amorphous oxide transistors
- Authors
- Lee, Jiwon; Shin, Yeonwoo; Jeong, Jae Kyeong
- Issue Date
- Dec-2017
- Publisher
- International Display Workshops
- Keywords
- Aluminum yttrium oxide; Indium zinc oxide; Solution process; Ternary alloy; Thin-film transistor
- Citation
- Proceedings of the International Display Workshops, v.1, pp.410 - 412
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 1
- Start Page
- 410
- End Page
- 412
- ISSN
- 1883-2490
- Abstract
- The low-cost spin-cast AI0.4Y1.6O3 films were prepared as the gate insulator for the IZO transistors. The ternary AI0.4Y1.6O3 films provide a smooth, high permittivity with excellent insulating properties compared to binary AI2O3 or Y2O3 films. This behavior can be attributed to the structure stabilization resulting from the cation alloying-mixing effect.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)