(Invited) design and challenging issues of core/shell quantum dots for enhancing power-conversion-efficiency in si solar-cells
- Authors
- Jalalah, Mohammed; Park, Jea-Gun
- Issue Date
- Oct-2017
- Publisher
- Electrochemical Society Inc.
- Citation
- ECS Transactions, v.80, no.10, pp.685 - 692
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 80
- Number
- 10
- Start Page
- 685
- End Page
- 692
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18771
- DOI
- 10.1149/08010.0685ecst
- ISSN
- 1938-5862
- Abstract
- Enhancing the efficiency of commercial Si solar cells via quantum dots as an energy-down-shift layer is a new, straightforward, and cost-effective approach to utilize the wasted energy in the ultraviolet-light. Cd-based core/shell quantum dots have been used as an efficient energy-down-shift quantum dot layer on the front surface of Si solar cells to enhance their photovoltaic properties. Here, we describe the designing of energy-down-shift quantum dot layers using three types of Cd-based QDs, binary CdSe/ZnS, ternary Cd0.5Zn0.5S/ZnS, and Mn2+-doped Cd0.5Zn0.5S/ZnS QDs to enhance the short-circuit density by 6.18, 6.48, and 4.02%; thereby, the power conversion efficiency improved by 5.51, 6.40, and 3.22%, respectively, of Si solar cells. In addition, the technical and environmental challenges that limit their commercial applications for cost-effective and high-performance Si solar cells are discussed.
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