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A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications

Authors
Yu, JunsuMin, Kyung KyuKim, YeonwooKim, SihyunHwang, SungminKim, Tae-HyeonKim, ChanghaKim, HyungjinLee, Jong-HoKwon, DaewoongPark, Byung-Gook
Issue Date
Sep-2021
Publisher
IOP PUBLISHING LTD
Keywords
ferroelectric tunnel junctions; physical unclonable functions; FTJ crossbar arrays
Citation
NANOTECHNOLOGY, v.32, no.48
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
32
Number
48
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188926
DOI
10.1088/1361-6528/ac1dd5
ISSN
0957-4484
Abstract
As the computing paradigm has shifted toward edge computing, improving the security of edge devices is attracting significant attention. However, because edge devices have limited resources in terms of power and area, it is difficult to apply a conventional cryptography system to protect them. On the other hand, as a simple security application, a physical unclonable function (PUF) can be implemented without power and area problems because it provides a security key by utilizing process variations without additional external circuits. Ferroelectric tunnel junctions (FTJs) are 2-terminal devices that store information by changing the resistance of a ferroelectric material, where the resistance is determined by the polarization states of the ferroelectric domains. Because polycrystalline ferroelectric materials have a multi-domain nature, domain variation can also be used as a randomness source to induce cell-to-cell variations along with process variations. In this paper, we demonstrate PUF operations of a low-power, small area 16 x 16 hafnium oxide (pure-HfO (x) )-based FTJ array using certain metrics. It is clear that the proposed array consisting of scaled FTJs has adequate randomness for security applications such that the array-level PUF operations are robust against model-based machine learning attacks.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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