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Anti-solvent treatment time approach to high efficiency perovskite solar cells with temperature of coating environmental

Authors
Sin, JaegwanKim, HyojungKim, MijoungKim, MoonhoeShin, JeonghunHong, JinpyoYang, JungYup
Issue Date
Jan-2023
Publisher
ELSEVIER
Keywords
Perovskite solar cel; lAnti -solvent treatment; Turbidity point; Drive -level capacitance profiling; Trap analysis
Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.250, pp.1 - 6
Indexed
SCIE
SCOPUS
Journal Title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume
250
Start Page
1
End Page
6
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189070
DOI
10.1016/j.solmat.2022.112054
ISSN
0927-0248
Abstract
The fabrication conditions of the light absorber layer (organic-inorganic halide perovskite) have a very large effect on the device performance in perovskite solar cells. In case of using the 1-step anti-solvent treatment (AST), their show very different characteristics depending on the AST time, amount, and temperature, etc. Here, we determined the optimal AST time for the synthesis of perovskite light absorber layer in relation to the turbidity point (TP) of the precursor solution during spin coating according to the temperature inside the glovebox. The TP was examined according to the fluid flow of the host solvent, and it depended on various conditions, such as the temperature and substrate. The measured TP was almost identical to the estimated TP, and both tended to decrease as the internal temperature increased. The AST time and the internal temperature of the glovebox significantly affected the crystallinity and device performance of the perovskite, and the best device performance of 18.9% for a methylammonium lead iodide (MAPbI3) solar cell with n-i-p normal planar structure was achieved by applying an AST time of 9.5 s at 25 degrees C. Drive-level capacitance profiling and thermal admittance spectroscopy results confirmed that the optimal AST time of 9.5 s yielded a minimum trap density of 2.1 x 1015/cm3, which was related to the trap states of MAPbI3.
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