Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Ho | - |
dc.contributor.author | Kwon, Dae Woong | - |
dc.contributor.author | Kim, Seunghyun | - |
dc.contributor.author | Baek, Myung-Hyun | - |
dc.contributor.author | Lee, Sungbok | - |
dc.contributor.author | Kang, Jinkyu | - |
dc.contributor.author | Jang, Woojae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2023-09-04T07:44:10Z | - |
dc.date.available | 2023-09-04T07:44:10Z | - |
dc.date.created | 2023-07-21 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189914 | - |
dc.description.abstract | In order to verify the effects of polycrystalline Si (poly-Si) body thickness scale-down on read operation in 3D NAND flash memory which has tube type thin body, TCAD simulations and the measurements of fabricated devices are performed. I-D-V-G characteristics and transient drain current behaviors are investigated in 3D NAND devices with various body thicknesses and grain sizes. It has been known that drain current undershoot/overshoot is observed in poly-Si channel devices by falling/rising step gate bias. These phenomena are strongly related with transient of potential barrier height due to slow capture/emission rate of poly-Si grain boundary traps. As the body thickness decreases with the same grain size, the transient current instability, on-state current, and subthreshold-swing are improved. When the grain size is increased with the same body thickness, the transient current instability, on-state current, and subthreshold-swing are improved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Dae Woong | - |
dc.identifier.doi | 10.1016/j.sse.2018.11.009 | - |
dc.identifier.scopusid | 2-s2.0-85057588474 | - |
dc.identifier.wosid | 000453787900008 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.152, pp.41 - 45 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 152 | - |
dc.citation.startPage | 41 | - |
dc.citation.endPage | 45 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | POLYCRYSTALLINE-SILICON | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordAuthor | 3D NAND | - |
dc.subject.keywordAuthor | Poly-Si | - |
dc.subject.keywordAuthor | Body thickness | - |
dc.subject.keywordAuthor | Grain size | - |
dc.subject.keywordAuthor | Grain boundary trap | - |
dc.subject.keywordAuthor | Transient drain current | - |
dc.subject.keywordAuthor | Subthreshold-swing | - |
dc.subject.keywordAuthor | On-state current | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0038110118302120?via%3Dihub | - |
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