Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
- Authors
- Lee, Sang-Ho; Kwon, Dae Woong; Kim, Seunghyun; Baek, Myung-Hyun; Lee, Sungbok; Kang, Jinkyu; Jang, Woojae; Park, Byung-Gook
- Issue Date
- Feb-2019
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- 3D NAND; Poly-Si; Body thickness; Grain size; Grain boundary trap; Transient drain current; Subthreshold-swing; On-state current
- Citation
- SOLID-STATE ELECTRONICS, v.152, pp.41 - 45
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 152
- Start Page
- 41
- End Page
- 45
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189914
- DOI
- 10.1016/j.sse.2018.11.009
- ISSN
- 0038-1101
- Abstract
- In order to verify the effects of polycrystalline Si (poly-Si) body thickness scale-down on read operation in 3D NAND flash memory which has tube type thin body, TCAD simulations and the measurements of fabricated devices are performed. I-D-V-G characteristics and transient drain current behaviors are investigated in 3D NAND devices with various body thicknesses and grain sizes. It has been known that drain current undershoot/overshoot is observed in poly-Si channel devices by falling/rising step gate bias. These phenomena are strongly related with transient of potential barrier height due to slow capture/emission rate of poly-Si grain boundary traps. As the body thickness decreases with the same grain size, the transient current instability, on-state current, and subthreshold-swing are improved. When the grain size is increased with the same body thickness, the transient current instability, on-state current, and subthreshold-swing are improved.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189914)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.