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A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair
- Issue Date
- Aug-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bidirectional; differential; neutralization; phased array; SiGe BiCMOS
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.8, pp 717 - 719
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 28
- Number
- 8
- Start Page
- 717
- End Page
- 719
- ISSN
- 1531-1309
1558-1764
- Abstract
- This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip transformer-based input-output baluns are included in the design for single-ended measurement and characterization. The BDA was implemented using GlobalFoundries 8HP 0.13-mu m SiGe BiCMOS technology. The forward and backward gains are 10 and 8.6 dB, with noise figure of 3.9 and 4.2 dB, respectively, at 28 GHz. The input-referred 1-dB compression point at 28 GHz for forward and backward operations is -2.4 and -0.4 dBm, respectively. The BDA consumes 26.9 (mW) of power with a 1.6-V V-CC at a V-BE bias of 0.86 V. The circuit has dimensions of 0.71 x 0.90 mm(2) including bondpads.
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Related Researcher
- Song, Ickhyun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)