A novel fabrication method for co-integrating ISFET with damage-free sensing oxide and threshold voltage-tunable CMOS read-out circuits
- Authors
- Kwon, Dae Woong; Lee, Ryoongbin; Kim, Sihyun; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook
- Issue Date
- May-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Hybrid sensing system of ISFET and CMOS read-out circuits; Co-integration of ISFETs and CMOS devices; Damage-free sensing oxide in ISFET; Threshold voltage-tunable CMOS read-out circuits
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.260, pp.627 - 634
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 260
- Start Page
- 627
- End Page
- 634
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190944
- DOI
- 10.1016/j.snb.2017.12.193
- ISSN
- 0925-4005
- Abstract
- A novel fabrication method using a top SiO2-SiN-bottom SiO2 (ONO) dielectric stack is proposed and implemented to obtain ion sensitive field effect transistor (ISFET) with damage-free sensing oxide and threshold voltage (Vth)-tunable devices in CMOS read-out circuits. By wet-etching the top SiO2 and the SiN sequentially, the ISFET with damage-free sensing oxide is obtained due to the high selectivity between them. Also, the Vth-tunable circuit devices with the ONO stacks are simultaneously achieved by protecting the ONO stacks from the wet-etching. Through the measurements of pH and biomolecule responses, it is confirmed that the pH and biomolecule can be detected stably because the drain current (I-D) is stabilized to a predetermined value more quickly and the I-D fluctuation during the I-D stabilization is significantly reduced compared with devices having damaged sensing oxide. Additionally, it is verified that the Vth of devices for circuits can be fine-controlled by injecting charges into the SiN via Fowler-Nordheim tunneling. Furthermore, it is demonstrated that the biomolecule-induced Vth shift of similar to 150 mV in the proposed ISFET is successfully amplified to the output voltage change of similar to 370 mV in common source amplifier (CSA) voltage-readout circuit consisting of one p-type ISFET and one Vth-tuned n-type MOS.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190944)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.