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Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation
- Issue Date
- Feb-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- 3D stacked NAND flash memory; Channel stacked NAND flash memory; Layer selection by multi-level operation (LSM)
- Citation
- SOLID-STATE ELECTRONICS, v.140, no.SI, pp.46 - 50
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 140
- Number
- SI
- Start Page
- 46
- End Page
- 50
- ISSN
- 0038-1101
- Abstract
- To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)