Non-volatile reconfigurable spin logic functions in a two-channel Hall bar by spin–orbit torque-based magnetic domains and directional read currentopen access
- Authors
- Shin, JeongHun; Seo, Jeongwoo; Song, Saegyoung; Kim, WooJong; Hyeon, Da Seul; Hong, JinPyo
- Issue Date
- Jul-2023
- Publisher
- NATURE PORTFOLIO
- Citation
- SCIENTIFIC REPORTS, v.13, no.1, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 13
- Number
- 1
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/191276
- DOI
- 10.1038/s41598-023-38580-1
- ISSN
- 2045-2322
- Abstract
- A long-standing goal of CMOS-based logic devices is to meet the needs of key markets, including ultralow-power operation and high operation speed, along with the continuing miniaturization of the architecture. However, despite significant progress in their development, conventional CMOS-based devices still suffer from drawbacks such as introducing large unintended leakage currents and volatile behavior. Thus, reconfigurable logic gates based on magnetic domain (MD) have emerged as a highly promising option because they offer fast operation speeds, nonvolatility, and diverse logic functions in a single-device configuration. Here, we address multiple reconfigurable MD logic gates in a single two-channel Hall bar device by varying the voltage-driven read-current directions and selecting a non-inverting or inverting comparator in W/CoFeB/MgO/Ta stacks. The non-volatile MD switching behavior induced by spin–orbit torque significantly affects our logic gate functions, which are not necessarily synchronized to a single clock. By adapting MD switching by spin-orbit torque and anomalous Hall effect voltage outputs, we identified eight reconfigurable logic gates, including AND, NAND, NOR, OR, INH, Converse INH, Converse IMP, and IMP, in a single device. These experimental findings represent a significant step forward in a wide range of MD-based logic applications in the near future.
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