백색광 조사를 통해 환원된 산화 그래핀 기반의 저항 메모리에 관한 연구

Abstract

: In this study, an intense pulsed light (IPL) process for annealing graphene oxide (GO) insulator was conducted to form a flexible resistive random access memory (ReRAM) [1-2]. A bottom electrode in ReRAM structure was formed by deposition copper (Cu) on flexible, transparent polyimide (PI) substrate. The GO thin insulator layer was fabricated using spin coating method with distilled-water (D.I water) and ethanol-based solution on flexible bottom electrode. The irradiation conditions (i.e. pulse duration, irradiation energy) was optimized to obtain switching characteristics. A top electrode was formed by deposition aluminum (Al) on insulator layer. The switching operation characteristics of the ReRAM was measured using parameter analyzer. The endurance characteristics and on/off ration were evaluated. The switching mechanism of reduction degree of GO layer was analyzed using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), so this result verifies the effect of the IPL annealing. Therefore, the r-GO/GO based ReRAM showed write-once read-many times (WORM) characteristics and high electrical characteristics such as (~103) on/off ratio and (1000 switching cycles) endurance properties.