Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
- Authors
- Kim, Taikyu; Choi, Cheol Hee; Hur, Jae Seok; Ha, Daewon; Kuh, Bong Jin; Kim, Yongsung; Cho, Min Hee; Kim, Sangwook; Jeong, Jae Kyeong
- Issue Date
- Oct-2023
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- 3D devices; back-end-of-line transistors; field-effect transistors; memory devices; monolithic 3D integration; oxide semiconductors; synaptic devices
- Citation
- ADVANCED MATERIALS, v.35, no.43, pp.1 - 50
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 35
- Number
- 43
- Start Page
- 1
- End Page
- 50
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192867
- DOI
- 10.1002/adma.202204663
- ISSN
- 0935-9648
- Abstract
- As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.
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