Influence of current density on constant current electric field enhanced aluminum induced crystallization of amorphous silicon thin films
- Authors
- Choi, Young Jun; Ryu, Kyongtae; Lee, Hee-Lak; Moon, Seung Jae
- Issue Date
- Aug-2023
- Publisher
- Elsevier B.V.
- Keywords
- Aluminum induced crystallization; Amorphous silicon; Electric current density; Joule heating; Layer exchange; Polycrystalline silicon
- Citation
- Thin Solid Films, v.779, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 779
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193068
- DOI
- 10.1016/j.tsf.2023.139919
- ISSN
- 0040-6090
- Abstract
- In this study, electric field-enhanced aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) thin films was investigated considering various current densities. Constant electric currents of 4, 5, and 6 A were applied to assess the Joule heating characteristics during specific durations (40, 15.5, and 9 s). The samples were prepared by depositing a 200-nm thick a-Si layer on a glass substrate and sputtering a 300-nm thick aluminum (Al) layer onto the a-Si layer. During the AIC process, layer exchange occured via the diffusion of silicon (Si) into the Al layer. This phenomenon was verified by the in-situ reflectivity, which was in excellent agreement with thin-film optics calculations. During the annealing, processing temperatures were lower than 470 °C, which is less than the Al-Si eutectic temperature of 577 °C. The Raman peak observed near a wavenumber of 519 cm−1 revealed the formation of polycrystalline silicon films through Joule heating processes. Field-effect scanning electron microscopy images were captured and analyzed to investigate the surface morphology of the samples, specifically focusing on grain growth.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 기계공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193068)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.