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Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Wonjun | - |
| dc.contributor.author | Kim, Sangwoo | - |
| dc.contributor.author | Koo, Ryun-Han | - |
| dc.contributor.author | Kwon, Dongseok | - |
| dc.contributor.author | Kim, Jae-Joon | - |
| dc.contributor.author | Kwon, Deok-Hwang | - |
| dc.contributor.author | Kwon, Daewoong | - |
| dc.contributor.author | Lee, Jong-Ho | - |
| dc.date.accessioned | 2023-11-24T05:23:50Z | - |
| dc.date.available | 2023-11-24T05:23:50Z | - |
| dc.date.issued | 2023-06 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193124 | - |
| dc.description.abstract | In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (<italic>L</italic>s). The findings reveal that the magnitude of 1/<italic>f</italic> noise decreases with a decrease in <italic>L</italic>, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2023.3267134 | - |
| dc.identifier.scopusid | 2-s2.0-85153494520 | - |
| dc.identifier.wosid | 001001401500032 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.44, no.6, pp 1003 - 1006 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 44 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 1003 | - |
| dc.citation.endPage | 1006 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | NANOWIRE TRANSISTORS | - |
| dc.subject.keywordAuthor | channel length, 1/f noise | - |
| dc.subject.keywordAuthor | ferroelectric junctionless thin-film transistor (FE JL TFT) | - |
| dc.subject.keywordAuthor | low-frequency noise (LFN) | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/10102471 | - |
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)