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Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors
- Authors
- Shin, Wonjun; Kim, Sangwoo; Koo, Ryun-Han; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Deok-Hwang; Kwon, Daewoong; Lee, Jong-Ho
- Issue Date
- Jun-2023
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- channel length, 1/f noise; ferroelectric junctionless thin-film transistor (FE JL TFT); low-frequency noise (LFN)
- Citation
- IEEE Electron Device Letters, v.44, no.6, pp 1003 - 1006
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 44
- Number
- 6
- Start Page
- 1003
- End Page
- 1006
- ISSN
- 0741-3106
1558-0563
- Abstract
- In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (<italic>L</italic>s). The findings reveal that the magnitude of 1/<italic>f</italic> noise decreases with a decrease in <italic>L</italic>, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)