Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse
- Authors
- Sokolov, Andrey S.; Jeon, Yu-Rim; Ku, Boncheol; Choi, Changhwan
- Issue Date
- May-2020
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Ar ions plasma; Surface modification; Heterostructure thin film; Flexible substrate; Synapse memristor
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.822, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 822
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1934
- DOI
- 10.1016/j.jallcom.2019.153625
- ISSN
- 0925-8388
- Abstract
- The enhanced resistive switching (RS) characteristics of the flexible TaOx/InGaZnO (IGZO)-based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are demonstrated in the Ti/TaOx/IGZO/Pt heterostructure. The Ar ion (Ar+) plasma treatment was intentionally induced on the surface of TaOx/IGZO thin films to improve RS filament consistency and results displayed the improved uniform RS behavior of the plasma-treated device. Further, this device is investigated as an artificial electronic synapse and important synaptic functions such as long term potentiation (LTP), long term depression (LTD), paired-pulse facilitation (PPF), post-tetanic potential (PTP) and spike-timing dependent plasticity (STDP) characteristics are well emulated and analogues to the biological synapse behavior. The bending test to assess influence of stress/strain induction on the RS properties is also demonstrated. Further, bulk and angle-resolved x-ray photoelectron spectroscopy (XPS) is utilized to shed a light on the influence of Ar+ plasma on the surface of TaOx/IGZO thin films, as well as AFM analysis, and this insight is argued in the elaborated RS mechanism discussion.
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