Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer
- Authors
- Park, Chan Ho; Lee, Kwang H.; Lee, Byoung H.; Sung, Myung M.; Im, Seongil
- Issue Date
- Apr-2010
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.20, no.13, pp 2638 - 2643
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 20
- Number
- 13
- Start Page
- 2638
- End Page
- 2643
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193890
- DOI
- 10.1039/b921732k
- ISSN
- 0959-9428
1364-5501
- Abstract
- We report on the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with 200 nm-thick poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer. The NVM-TFTs have been tested for the most optimum properties in respect of their memory windows and memory retention properties, as prepared with the modified channel/ferroelectric interfaces inserted by respective thin buffer layers: 1, 3, 5, 10, and 20 nm-thin Al2O3, or 1 nm-thin inorganic-organic hybrid dielectrics of a AlOx-(or TiOx-) self assembled monolayer (SAM). All our NVM-TFTs operated on glass substrates under the low-voltage WR-ER pulses of +/- 20 V with a maximum field effect mobility of similar to 1 cm(2)/V s and memory window of 12 similar to 16 V. Among all the NVM-TFTs, the device with the 5 nm-thin Al2O3 buffer demonstrated the longest retention time of more than 104 s without much reduction of write-to-erase (WR/ER) current ratio, keeping a good memory window of similar to 16 V and WR/ER ratio of similar to 40.
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