Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm
- Authors
- Park, Jin-Hyung; Cui, Hao; Cho, Jong-Young; Hwang, Hee-Sub; Hwang, Woong-Jun; Paik, Ungyu; Kang, Hyun-Goo; Kwak, Noh-Jung; Park, Jea-Gun
- Issue Date
- Jun-2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.6, pp H607 - H612
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 157
- Number
- 6
- Start Page
- H607
- End Page
- H612
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193941
- DOI
- 10.1149/1.3368675
- ISSN
- 0013-4651
1945-7111
- Abstract
- Using chemical mechanical polishing (CMP) slurry for multiselectivity among SiO(2), Si(3)N(4), and poly-Si films is essential for NAND flash memory cells beyond 32 nm to reduce the dependency of the polishing rate on the pattern density in a chip. The polishing rate selectivity is controlled with an anionic surfactant [poly(acrylic acid) (PAA)] at the beginning of the CMP process and is controlled by a nonionic surfactant [poly(vinylpyrrolidone)(PVP)] for continuous CMP. The selective absorption of PAA on a Si(3)N(4) film surface suppresses the polishing rate of the Si(3)N(4) film, whereas the selective absorption of PVP on a poly-Si film surface suppresses the polishing rate of the poly-Si film. We achieved multiselectivity among SiO(2), Si(3)N(4), and poly-Si films of similar to 65: similar to 15:1 in a nanoceria-based slurry with a PAA concentration of 0.05 wt % and a PVP concentration of 0.2 wt %.
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