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Potassium Permanganate as Oxidizer in Alkaline Slurry for Chemical Mechanical Planarization of Nitrogen-doped Polycrystalline Ge2Sb2Te5 Film
- Authors
- Cui, Hao; Cho, Jong-Young; Hwang, Hee-Sub; Lim, Jae-Hyung; Park, Jin-Hyung; Park, Hyung Soon; Hong, Kwon; Park, Jea-Gun
- Issue Date
- Nov-2010
- Publisher
- Electrochemical Society, Inc.
- Citation
- Journal of the Electrochemical Society, v.157, no.11, pp H1036 - H1041
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of the Electrochemical Society
- Volume
- 157
- Number
- 11
- Start Page
- H1036
- End Page
- H1041
- ISSN
- 0013-4651
1945-7111
- Abstract
- For phase-change memory beyond the 30 nm design rule, chemical mechanical planarization (CMP) performing at a high polishing rate, reasonable selectivity, and no corrosion-induced pits is essential for planarizing nitrogen-doped polycrystalline Ge2Sb2Te5 (GST) deposited on the confined memory cell structure. We develop a new alkaline slurry added with KMnO4 used as an oxidizer. The alkaline slurry added with 0.3 wt % KMnO4 has a polycrystalline GST film polishing rate of 5200 angstrom/min, a polishing rate selectivity between polycrystalline GST and SiO2 film of 100:1, and no corrosion-induced pit. In addition, polycrystalline GST film CMP using the alkaline slurry added with KMnO4 is observed to follow a cyclic reaction polishing mechanism.
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