Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperaturesopen access
- Authors
- So, Hongyun; Senesky, Debbie G.
- Issue Date
- Aug-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gallium nitride; photodetector; low-temperature environments; ultraviolet; frost formation
- Citation
- IEEE SENSORS JOURNAL, v.17, no.15, pp.4752 - 4756
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 17
- Number
- 15
- Start Page
- 4752
- End Page
- 4756
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19462
- DOI
- 10.1109/JSEN.2017.2712639
- ISSN
- 1530-437X
- Abstract
- Effects of frost growth on the sensitivity of gallium nitride (GaN) photodetectors were investigated by characterizing electrical and optical properties under dark and 365-nm ultraviolet (UV) illumination from room temperature down to -100°C. The direct wire bonding architecture was used to create aluminum/GaN interdigitated devices for the microfabrication. As the operation temperature decreased below -5°C, the frost formed from humid air was observed on the GaN surface, and photo-to-dark current ratio (sensitivity factor) showed significant reduction (6.76 at room temperature and 2.73 at -100°C under 1 V-bias). The presence of frost on the device surface significantly reduced the absorption of incident UV light into the GaN surfaces (average 85.6% reduction from room temperature to -70°C). This paper supports the characterization of the GaN for UV detection within low-temperature environments, such as cryostats, Arctic research, and space exploration applications.
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