Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures
- Authors
- Yang, Dong Won; Lee, Keundong; Jang, Suhee; Chang, Won Jun; Kim, Su Han; Lee, Jae Hyung; Yi, Gyu-Chul; Il Park, Won
- Issue Date
- May-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- micro-LED; InGaN/GaN microcrystal; pressure sensor; optical sensor; wavelength change
- Citation
- ACS PHOTONICS, v.7, no.5, pp.1122 - 1128
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS PHOTONICS
- Volume
- 7
- Number
- 5
- Start Page
- 1122
- End Page
- 1128
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1947
- DOI
- 10.1021/acsphotonics.0c00251
- Abstract
- Optical detection of pressure has the advantage of direct and dynamic indication of the pressure distribution with a high spatial resolution. In this study, microcrystal (mu-crystal) light-emitting diodes (LEDs) that can exhibit an unprecedented large wavelength response to pressure are demonstrated. As a key strategy, three-dimensional InGaN/GaN mu-crystals are engineered to have a hollow core and multiple facets with different multiple quantum well (MQW) structures. The unique structure allows pressure-sensitive modulation of the dominantly emitting MQWs, resulting in an anomalously large change of similar to 50 nm in the ultimate emission wavelength under an external stress of 8 MPa. The underlying mechanism is elucidated via finite-element analysis of the strain development in the mu-crystals and the corresponding piezo-potentials. The results of the study suggest a new capability for dynamic color mapping of the pressure distribution with a high spatial resolution.
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