Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions
- Authors
- Oh, Keun-Tae; Kim, Hyo-Yeon; Kim, Dong-Hyun; Han, Jeong Hwan; Park, Jozeph; Park, Jin-Seong
- Issue Date
- Aug-2017
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Mist chemical vapor deposition; Al(acac)(3); Aluminum oxide; Aqueous solution
- Citation
- CERAMICS INTERNATIONAL, v.43, no.12, pp.8932 - 8937
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 43
- Number
- 12
- Start Page
- 8932
- End Page
- 8937
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19512
- DOI
- 10.1016/j.ceramint.2017.04.031
- ISSN
- 0272-8842
- Abstract
- Aluminum oxide (AlOx) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)3) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5–13.3 nm/min were achieved at substrate temperatures of 250–350 °C. The AlOx layers deposited at temperatures below 350 °C exhibit 3–5 at% residual carbon levels, however those grown at 350 °C exhibit only 1–2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (κ) of ~ 7.0, breakdown field of ~ 9 MV/cm and relatively low leakage current density of ~ 8.3×10⁻¹⁰ A/cm²
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