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Tailoring SS of a-IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hun Yoon, Seong | - |
| dc.contributor.author | Seok Hur, Jae | - |
| dc.contributor.author | Woong Bang, Seon | - |
| dc.contributor.author | Kyeong Jeong, Jae | - |
| dc.date.accessioned | 2024-11-28T08:28:21Z | - |
| dc.date.available | 2024-11-28T08:28:21Z | - |
| dc.date.issued | 2024-06 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/195257 | - |
| dc.description.abstract | We reported the fabrication of indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by plasma-enhanced atomic-layer-deposition (PEALD) process using different surface reactivities of the precursor-substrate combinations with controlled deposition sequences. In-Zn-Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (μFE) of 29.3 cm2/Vs compared to In-Ga-Zn (Case I) (84 mV/decade and 33.4 cm2/Vs). | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Tailoring SS of a-IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1002/sdtp.17937 | - |
| dc.identifier.scopusid | 2-s2.0-85202609022 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 2253 - 2255 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 2253 | - |
| dc.citation.endPage | 2255 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Carrier concentration | - |
| dc.subject.keywordPlus | Defect density | - |
| dc.subject.keywordPlus | Plasma CVD | - |
| dc.subject.keywordPlus | Plasma enhanced chemical vapor deposition | - |
| dc.subject.keywordPlus | Semiconducting gallium compounds | - |
| dc.subject.keywordPlus | Semiconducting indium compounds | - |
| dc.subject.keywordPlus | Semiconducting zinc compounds | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Zinc alloys | - |
| dc.subject.keywordAuthor | atomic layer deposition | - |
| dc.subject.keywordAuthor | conversion mechanism | - |
| dc.subject.keywordAuthor | density functional theory | - |
| dc.subject.keywordAuthor | indium gallium zinc oxide | - |
| dc.subject.keywordAuthor | Oxide semiconductor | - |
| dc.subject.keywordAuthor | subthres hold swing | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.17937 | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)