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Tailoring SS of a-IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences
- Issue Date
- Jun-2024
- Keywords
- atomic layer deposition; conversion mechanism; density functional theory; indium gallium zinc oxide; Oxide semiconductor; subthres hold swing; thin-film transistor
- Citation
- Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 2253 - 2255
- Pages
- 3
- Indexed
- SCOPUS
- Volume
- 55
- Number
- 1
- Start Page
- 2253
- End Page
- 2255
- ISSN
- 0097-966X
2168-0159
- Abstract
- We reported the fabrication of indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by plasma-enhanced atomic-layer-deposition (PEALD) process using different surface reactivities of the precursor-substrate combinations with controlled deposition sequences. In-Zn-Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (μFE) of 29.3 cm2/Vs compared to In-Ga-Zn (Case I) (84 mV/decade and 33.4 cm2/Vs).
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)