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GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
- Issue Date
- Jul-2017
- Publisher
- The Korean Physical Society
- Keywords
- 2DHG; GaSb; Hole mobility; Lattice mismatch; III-V CMOS
- Citation
- Current Applied Physics, v.17, no.7, pp 1005 - 1008
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Current Applied Physics
- Volume
- 17
- Number
- 7
- Start Page
- 1005
- End Page
- 1008
- ISSN
- 1567-1739
1878-1675
- Abstract
- We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 ㎠/Vs and high carrier concentration of 4.3 x 10¹²/㎠ at RT.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)