Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes
- Authors
- Sung, Sihyun; Kim, Tae Whan
- Issue Date
- Jul-2017
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- PEDOT:PSS/AgNW; Flexible NVM; Nanocomposite; Electrical characteristic
- Citation
- APPLIED SURFACE SCIENCE, v.411, pp.67 - 72
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 411
- Start Page
- 67
- End Page
- 72
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19584
- DOI
- 10.1016/j.apsusc.2017.03.112
- ISSN
- 0169-4332
- Abstract
- Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Omega/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 x 10(3) was maintained for retention times longer than 1 x 10(4) s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 x 10(3) and 1.4 x 10(3), respectively. The retention times of the devices before and after bending remained same 1 x 10(4) s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer.
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