Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)(2)Y(iPr-amd) precursor
DC Field | Value | Language |
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dc.contributor.author | Kang, Jiehun | - |
dc.contributor.author | Jung, Yong Chan | - |
dc.contributor.author | Seong, Sejong | - |
dc.contributor.author | Lee, Taehoon | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Noh, Wontae | - |
dc.contributor.author | Park, In-Sung | - |
dc.date.accessioned | 2021-08-02T14:55:38Z | - |
dc.date.available | 2021-08-02T14:55:38Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19694 | - |
dc.description.abstract | Y2O3 thin films were grown by atomic layer deposition (ALD) through a heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor at 350 °C. The structural and chemical properties of both as-deposited and annealed Y2O3 films at 500 °C and 700 °C are analyzed by atomic force microscopy for variation in surface roughness, X-ray diffraction for crystalline structure, and X-ray photoelectron spectroscopy for chemical states. The as-deposited Y2O3 film shows the same crystalline orientation along the plane (222), a stoichiometric state, and minimal hydroxylate formation up to 700 °C. Being the dielectric layer in the metal-oxide-semiconductor capacitor, the as-deposited ALD-Y2O3 films with liquid (iPrCp)2Y(iPr-amd) precursor without any post-deposition annealing show the much lower leakage density than ALD-Y2O3 with solid Y(MeCp)3. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)(2)Y(iPr-amd) precursor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1016/j.mssp.2017.02.031 | - |
dc.identifier.scopusid | 2-s2.0-85014679233 | - |
dc.identifier.wosid | 000399631700039 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.63, pp.279 - 284 | - |
dc.relation.isPartOf | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 63 | - |
dc.citation.startPage | 279 | - |
dc.citation.endPage | 284 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | YTTRIUM-OXIDE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | QUALITY | - |
dc.subject.keywordAuthor | Y2O3 film | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | (iPrCp)(2)Y(iPr-amd) | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1369800117303566?via%3Dihub | - |
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