Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)(2)Y(iPr-amd) precursor
- Authors
- Kang, Jiehun; Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Ahn, Jinho; Noh, Wontae; Park, In-Sung
- Issue Date
- Jun-2017
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Y2O3 film; Atomic layer deposition; (iPrCp)(2)Y(iPr-amd); XPS; Leakage current
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.63, pp.279 - 284
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 63
- Start Page
- 279
- End Page
- 284
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19694
- DOI
- 10.1016/j.mssp.2017.02.031
- ISSN
- 1369-8001
- Abstract
- Y2O3 thin films were grown by atomic layer deposition (ALD) through a heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor at 350 °C. The structural and chemical properties of both as-deposited and annealed Y2O3 films at 500 °C and 700 °C are analyzed by atomic force microscopy for variation in surface roughness, X-ray diffraction for crystalline structure, and X-ray photoelectron spectroscopy for chemical states. The as-deposited Y2O3 film shows the same crystalline orientation along the plane (222), a stoichiometric state, and minimal hydroxylate formation up to 700 °C. Being the dielectric layer in the metal-oxide-semiconductor capacitor, the as-deposited ALD-Y2O3 films with liquid (iPrCp)2Y(iPr-amd) precursor without any post-deposition annealing show the much lower leakage density than ALD-Y2O3 with solid Y(MeCp)3.
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