Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applicationsopen access
- Authors
- Kang, Shinyoung; Lee, Juyoung; Kang, Myounggon; Song, Yun Heub
- Issue Date
- Aug-2020
- Publisher
- MDPI
- Keywords
- interfacial phase-change memory; phase-change memory; artificial synaptic device; superlattice; neuromorphic devices
- Citation
- ELECTRONICS, v.9, no.8, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 9
- Number
- 8
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2033
- DOI
- 10.3390/electronics9081268
- ISSN
- 2079-9292
- Abstract
- In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb(2)Te(3)alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge-Sb-Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3(GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.
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