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Monolithic 3D Integration Process and Its Device Applications

Authors
Choi, Chang hwan
Issue Date
Mar-2022
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Ion Implantation; Monolithic 3D Integration (M3D); Wafer Bonding
Citation
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, pp 76 - 78
Pages
3
Indexed
SCOPUS
Journal Title
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Start Page
76
End Page
78
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/203603
DOI
10.1109/EDTM53872.2022.9798121
Abstract
We have demonstrated the monolithic 3D integration (M3D) process and its applications to hybrid CMOS and photodiode device system as well as 3D neuromorphic device system. This M3D process was realized by both hydrogen ion (H+) implantation and Silicon-on-Insulator (SOI) wafer bonding with optimized various unit processes. Our result indicate that M3D integration process can be an alternative process integration scheme to the conventional 2D scaling process.
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Choi, Chang hwan
COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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