Characteristics of layered tin disulfide deposited by atomic layer deposition with H₂S annealingopen accessCharacteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing
- Other Titles
- Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing
- Authors
- Lee, Seungjin; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Choi, Hyeongsu; Park, Hyunwoo; Jeon, Hyeongtag
- Issue Date
- Apr-2017
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.7, no.4, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP ADVANCES
- Volume
- 7
- Number
- 4
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20441
- DOI
- 10.1063/1.4982068
- ISSN
- 2158-3226
- Abstract
- Tin disulfide (SnS₂) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS₂) layers deposited via atomic layer deposition (ALD) using tetrakis(dimethylamino) tin (TDMASn) as a Sn precursor and H₂S gas as a sulfur source at low temperature (150°C). The crystallinity of SnS₂ was improved by H₂S gas annealing. We carried out H₂S gas annealing at various conditions (250°C, 300°C, 350°C, and using a threestep method). Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the valence state corresponding to Sn⁴⁺ and S²⁻ in the SnS₂ annealed with H₂S gas. The SnS₂ annealed with H₂S gas had a hexagonal structure, as measured via X-ray diffraction (XRD) and the clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS₂ was improved after H₂S annealing and was confirmed using the XRD full-width at half-maximum (FWHM). In addition, high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure.
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