Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method
- Authors
- Kim, Kyungjun; Choi, Chulmin; Oh, Youngtaek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yunheub
- Issue Date
- Apr-2017
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 56
- Number
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20447
- DOI
- 10.7567/JJAP.56.04CN02
- ISSN
- 0021-4922
- Abstract
- Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.
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