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Spectral reflectometry characterization of an extreme ultraviolet attenuated phase-shifting mask blank

Authors
Shen, TaoMochi, IacopoJeong, DongminMueller, ElisabethAnsuinelli, PaoloAhn, JinhoEkinci, Yasin
Issue Date
Oct-2024
Publisher
SPIE - International Society for Optical Engineering
Keywords
spectral reflectometry; thin-film characterization; optical constants determination; extreme ultraviolet attenuated phase-shifting mask
Citation
Journal of Micro/ Nanolithography, MEMS, and MOEMS, v.23, no.4, pp 1 - 12
Pages
12
Indexed
SCIE
SCOPUS
Journal Title
Journal of Micro/ Nanolithography, MEMS, and MOEMS
Volume
23
Number
4
Start Page
1
End Page
12
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/206412
DOI
10.1117/1.JMM.23.4.041402
ISSN
1932-5150
1932-5134
Abstract
Background: Extreme ultraviolet (EUV) attenuated phase-shifting masks are complex structures with stringent requirements for manufacturing precision and materials properties, and they have been object of extensive research lately. Aim: We aim to characterize the optical constants (n and k) and the thickness of the layers in the mask stack with a nondestructive method. Approach: Using a spectral reflectometry approach with EUV and soft X-ray illumination at various incidence angles, different layer's properties in a photomask blank can be selectively probed. The optical constants and the thicknesses of the layers can be obtained by fitting a suitable model to the experimental reflectance. Results: The optical constants of the Pt-W alloy absorber and the thicknesses of the top three layers of the sample stack were accurately characterized. Conclusions: Stacked layer's properties can be selectively probed with the instrument (REGINE) we developed. The properties of the topmost layer can be characterized by assessing the probing depth, before investigating deeper layers with a suitable choice of illumination wavelength and angle of incidence.
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