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Hafnia-based ferroelectric computer vision system with artificial synaptic array

Authors
Park, Eun ChanKim, JangsaengKo, JonghyunShin, WonjunNguyen, Manh-CuongSong, MinsukKwon, Ki-RyunKoo, Ryun-HanKwon, Daewoong
Issue Date
Jun-2025
Publisher
Elsevier BV
Keywords
Ferroelectric thin-film transistors; Indium-gallium-zinc oxide channel; Compute-in-memory; Neuromorphic; Vision transformer
Citation
Nano Energy, v.139, pp 1 - 13
Pages
13
Indexed
SCIE
SCOPUS
Journal Title
Nano Energy
Volume
139
Start Page
1
End Page
13
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/207302
DOI
10.1016/j.nanoen.2025.110877
ISSN
2211-2855
2211-3282
Abstract
Recent developments in deep learning have significantly enhanced image classification capabilities and established a new performance standard for computer vision applications. However, these advancements are constrained by the high-energy demands of conventional von Neumann computing architectures. We propose an in-memory vision transformer (ViT) system that utilizes synaptic ferroelectric thin-film transistor (FeTFT) arrays combined with a high-mobility indium-gallium-zinc oxide (IGZO) channel to address this limitation. The in-memory ViT system facilitates parallel operations through vector-matrix multiplication (VMM) with a minimal hardware burden, thereby significantly reducing energy consumption while maintaining a high performance. The synaptic IGZO FeTFT array exhibits high mobility, precise conductance modulation, and robust endurance over extensive program/erase cycles. Precise weight-transfer capabilities and reliable VMM operations are demonstrated using synaptic IGZO FeTFT arrays. The proposed in-memory ViT system achieves an exceptional accuracy of approximately 94 % on the CIFAR-10 dataset even after more than 107program/erase cycles. A reliable and energy-efficient in-memory ViT system comprising the use of synaptic IGZO FeTFT arrays provides a viable solution for the energy limitations of advanced computer vision applications.
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