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Tunable coercive voltage and polarization of HZO through field-induced phase transitions

Authors
Han, ChanghyeonKwak, BeenKwon, Ki-RyunJeong, SoiKim, Jeong-HanChoi, Rinokwon, Daewoong
Issue Date
Aug-2025
Publisher
Pergamon Press
Keywords
Ferroelectric; HfxZr1-xO2; Metal-ferroelectric-metal (MFM); Phase-transition; Wake-up
Citation
Materials Science in Semiconductor Processing, v.195, pp 1 - 7
Pages
7
Indexed
SCIE
SCOPUS
Journal Title
Materials Science in Semiconductor Processing
Volume
195
Start Page
1
End Page
7
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/207385
DOI
10.1016/j.mssp.2025.109615
ISSN
1369-8001
1873-4081
Abstract
We explore the tunable ferroelectric properties of HfxZr1-xO2 (HZO), particularly focusing on coercive voltage (VC) and remnant polarization (Pr) through controlled cycling voltage. The findings reveal a crucial relationship between the ferroelectric properties and the proportion of the ferroelectric phase. The interaction between the ferroelectric and non-ferroelectric phases played a significant role in shaping the overall ferroelectric behavior. By leveraging the field-induced phase transitions, HZO properties could be finely tuned, which provides key insights for applications requiring low operating voltages and optimized polarization switching. These results pave the way for the development of high-performance and reliable ferroelectric devices.
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