Challenges of Atomic-Layer-Deposited Oxide Semiconductor Channels beyond PVD: Material, Devices, and M3D Stacked Structures

Abstract

This study explores ALD-based oxide semiconductors, highlighting in-situ composition control, atomic-scale ordering, and interface engineering. High-mobility (>100 cm²/V·s) IGZO and stable p-type SnO (<5 cm²/V·s) devices are achieved via optimized ALD processes. We demonstrate monolithic 3D- stacked complementary transistors and propose N₂O plasma for addressing mobility-stability trade-offs. ALD's pivotal role in scalable, high-performance active-matrix device fabrication is emphasized, showcasing its potential for mass production.