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Recent Progress, Opportunities and Properties in Polycrystalline Oxide TFTs

Authors
Kim, Gwang-BokChung, Sang WonJeong, Jae Kyeong
Issue Date
Jun-2025
Keywords
Crystallization; indium zinc tin oxide; OLED; thin-film transistor (TFT)
Citation
Digest of Technical Papers - SID International Symposium, v.56, no.1, pp 734 - 736
Pages
3
Indexed
SCOPUS
Journal Title
Digest of Technical Papers - SID International Symposium
Volume
56
Number
1
Start Page
734
End Page
736
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/209214
DOI
10.1002/sdtp.18270
ISSN
0097-966X
2168-0159
Abstract
This study explores advanced crystallization methods to enhance oxide TFT performance, addressing the demand for high-mobility, reliable semiconductors in large, ultra-highresolution OLEDs. While a-IGZO TFTs dominate current applications, evolving technologies necessitate improved crystalline quality, including optimized grain size and orientation. We highlight innovative manufacturing approaches and material science insights that offer potential solutions to the challenges of crystalline oxide semiconductors, paving the way for nextgeneration display technologies.
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