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Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures(vol 200 ,109995 , 2025)Corrigendum to “Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” (Materials Science in Semiconductor Processing (2025) 200, (S1369800125007322), (10.1016/j.mssp.2025.109995))
- Other Titles
- Corrigendum to “Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” (Materials Science in Semiconductor Processing (2025) 200, (S1369800125007322), (10.1016/j.mssp.2025.109995))
- Authors
- Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Kwon, Hyucknam; Kwon, Ki-Ryun; Choi, Rino; Kwon, Daewoong
- Issue Date
- Jan-2026
- Publisher
- ELSEVIER SCI LTD
- Citation
- Materials Science in Semiconductor Processing, v.201, pp 1 - 1
- Pages
- 1
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Science in Semiconductor Processing
- Volume
- 201
- Start Page
- 1
- End Page
- 1
- ISSN
- 1369-8001
1873-4081
- Abstract
- The authors regret that an important funding acknowledgment was unintentionally omitted in this paper. The corrected acknowledgment is as follows:
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)