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Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding
- Authors
- Kim, Gwang-Bok; Kim, Se Eun; Kim, Yena; Son, Kyeong-Seok; Park, Joon Seok; Lee, Sunhee; Jeong, Jae Kyeong
- Issue Date
- Nov-2024
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- oxide semiconductor; indium gallium zinc tin oxide; drain-induced barrier lowering; thin-film transistor; hydrogen
- Citation
- IEEE Electron Device Letters, v.45, no.11, pp 2130 - 2133
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 45
- Number
- 11
- Start Page
- 2130
- End Page
- 2133
- ISSN
- 0741-3106
1558-0563
- Abstract
- This study shows the beneficial coupling effects of Sn-induced metal-H (M-H) bonding on the drain-induced barrier lowering (DIBL) of amorphous In-Ga-Zn-Sn-O (a-IGZTO) thin-film transistors (TFTs) with short channel length. The a-IGZTO TFTs had a small DIBL factor of 52 mV/V as well as outstanding performance with a high field-effect mobility of 76.9 cm2/Vs, a steep subthreshold swing of 128 mV/decade, and a threshold voltage of 0.05 V. In addition, highly stable behavior against positive gate bias temperature and negative bias illumination temperature stress was observed for a-IGZTO TFTs. This could be attributed to favorable coupling effects of Sn-induced M-H bonding and the formation of a synergistic percolation pathway by In3+ and Sn4+.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)