Thermal Impact of TSV Misalignment and Micro-Bump Height in 3D IC Packages
- Authors
- Choi, Jaeyoung; Lim, Jaemyung
- Issue Date
- Jan-2026
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Advanced Package; Bump misalignment; TSV
- Citation
- International SoC Design Conference 2025, ISOCC 2025 - Proceedings of Technical Papers, pp 1 - 2
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- International SoC Design Conference 2025, ISOCC 2025 - Proceedings of Technical Papers
- Start Page
- 1
- End Page
- 2
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/213202
- DOI
- 10.1109/ISOCC66390.2025.11330057
- ISSN
- 2163-9612
2472-9655
- Abstract
- In high-performance Three-dimensional integrated circuits (3D-IC) packages such as HBM, TSVs (Through-Silicon Vias) function not only as electrical interconnects but also as key vertical heat conduction paths. This study performs FEM-based thermal simulations to analyze the impact of TSV misalignment on the thermal behavior of stacked die structures. In addition, the effect of varying μ-bump height on vertical heat dissipation is quantitatively evaluated under realistic package conditions. Simulation results show that both TSV misalignment and increased bump height degrade thermal performance, leading to higher maximum temperatures in the dies. These findings provide valuable insights for establishing thermal design guidelines in 3D IC layout and manufacturing.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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