Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O-3 radiation and low temperature annealing
- Authors
- Jeong, Hyun-Jun; Lee, Hyun-Mo; Oh, Keun-Tae; Park, Jozeph; Park, Jin-Seong
- Issue Date
- Dec-2016
- Publisher
- SPRINGER
- Keywords
- Oxide semiconductor; Thin film transistor; Ozone; UV
- Citation
- JOURNAL OF ELECTROCERAMICS, v.37, no.1-4, pp.158 - 162
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTROCERAMICS
- Volume
- 37
- Number
- 1-4
- Start Page
- 158
- End Page
- 162
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21337
- DOI
- 10.1007/s10832-016-0053-y
- ISSN
- 1385-3449
- Abstract
- High performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO) semiconductor were fabricated. In order to activate the electrical properties of the oxide semiconductor, different processes were used, involving thermal annealing, UV + O-3 (UVO) radiation, and UVO-assisted thermal annealing. While either UV radiation or thermal annealing at 150 A degrees C results in rather poor transfer characteristics, the combination of both allows the fabrication of high performance devices with field effect mobility values exceeding 20 cm(2)/Vs. X-ray photoelectron spectroscopy (XPS) analyses of ITGO films suggest that the density of defects related to oxygen-deficient sites are reduced upon UVO-assisted annealing. Also, hydroxide bonds are found to increase in the semiconductor material, which is highly likely to increase the free carrier concentration. The reduction of oxygen-related defects results in a decrease in charge trap density near the semiconductor/gate dielectric interface, and the UV-assisted annealed ITGO devices exhibit relatively small shifts in the threshold voltage (V-th) under positive bias stress.
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