Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C
- Authors
- Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun
- Issue Date
- Dec-2016
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Pt seed; p-MTJ; TMR ratio; BEOL
- Citation
- NANOTECHNOLOGY, v.27, no.48, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 27
- Number
- 48
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21354
- DOI
- 10.1088/0957-4484/27/48/485203
- ISSN
- 0957-4484
- Abstract
- For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 degrees C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t(Pt)): it peaked (similar to 134%) at a specific t(Pt) (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when tPt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when tPt increased from 3.3-14.3 nm.
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