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Hydrogen-Resistant IGZO TFT with Nitrogen-Engineered SiO2 Gate Insulator via PEALD
- Authors
- 박진성
- Issue Date
- 5-Dec-2025
- Place
- 일본 히로시마
- Conference Name
- IDW25
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)