Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands
DC Field | Value | Language |
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dc.contributor.author | Han, Jeong Hwan | - |
dc.contributor.author | Jung, Eun Ae | - |
dc.contributor.author | Kim, Hyo Yeon | - |
dc.contributor.author | Kim, Da Hye | - |
dc.contributor.author | Park, Bo Keun | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Son, Seung Uk | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.date.accessioned | 2021-08-02T16:27:17Z | - |
dc.date.available | 2021-08-02T16:27:17Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22154 | - |
dc.description.abstract | In2O3 thin films were grown from a newly developed, liquid, homoleptic, In-based complex, tris(1-dimethylamino-2-methyl-2-propoxy) indium [In(dmamp)(3)], and O-3 by atomic layer deposition (ALD) at growth temperatures of 150-200 degrees C. In(dmamp)(3) exhibited single-step evaporation with negligible residue and excellent thermal stability between 30 and 250 degrees C. The self-limiting surface reaction of In2O3 during ALD was demonstrated by varying the In(dmamp)(3) and O-3 pulse lengths, with a growth rate of 0.027 nm/cycle achieved at 200 degrees C. The In2O3 films grown at temperatures over 175 degrees C exhibited negligible concentrations of impurities, whereas that grown below 175 degrees C had concentrations of residual C of 6-8 at.%. Glancing angle X-ray diffraction revealed that the In2O3 films were polycrystalline in nature when the deposition temperature was greater than 200 degrees C. The In2O3 films grown at 150-200 degrees C exhibited carrier concentrations of 1.5 x 10(18)-6.6 x 10(19) cm(-3), resistivities of 15.1-2 x 10(-3) Omega cm, and Hall mobilities of 0.8-42 cm(2)/(V s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.apsusc.2016.04.120 | - |
dc.identifier.scopusid | 2-s2.0-84966270136 | - |
dc.identifier.wosid | 000378091700001 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.383, pp.1 - 8 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 383 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SOL-GEL METHOD | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PHYSICAL-PROPERTIES | - |
dc.subject.keywordPlus | IN2O3 FILMS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | WATER | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Novel In precursor | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Indium oxide | - |
dc.subject.keywordAuthor | Thin film | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433216308728?via%3Dihub | - |
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